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Equipment Angency
   FIB Application →
Circuit Modification
Probing Pad Building
Cross section

FIB Application

Perfict Lab FIB/SEM System Performance

  • Model:FEI DualBeam 820.  FIB/SEM ( I-beam / E-beam )

  • First launched commercial lab Dual-Beam system

  • high resolution up to 7nm

  • Synchronous FIB Ion-beam modification and SEM E-beam image monitoring

  • Microcircuit milling / halogen gas assistant etching

  • Cross-Section

  • Metal deposition ( Pt or tungsten )

  • VC (Voltage Contrast) detecting open/ short of metal, poly, contact and via.

  • up to 0.13um microcircuit / 8 inc wafer modification
Main Applications of FIB
Microcircuit Modification
Metal line cutting and metal line connecting (through metal deposition)
Test Pad/Probing Pad Building
Building testing pads anywhere inside the complicated microcircuit in order to acquiring IC internal signal with micro probing needles or E-beam tool.

Cross-sectional imaging through semiconductor devices (or any layered structure)

SEM/TEM sample preparation.

Voltage Contrast

VC (Voltage Contrast) detecting open/ short of metal, poly, contact and via.


Brief Introduction of FIB

The Focused Ion Beam (FIB) tool can cut away (mill) material from a defined area with dimensions typically in square microns or deposit material onto it. Milling is achieved by accelerating concentrated gallium ions to a specific site, which etches off any exposed material, leaving a very clean hole or surface. By introducing gases or an organic gas compound, the FIB can selectively etch one material much faster than surrounding materials, or deposit a metal or oxide. The FIB is used for such tasks as site-specific cross-sectioning for interfacial microstructure studies, preferential removal of certain metals or oxides, semiconductor device editing or modifications, site-specific TEM sample preparation, and grain imaging.

The Focused Ion Beam (FIB) system uses a Ga + ion beam to raster over the surface of a sample in a similar way as the electron beam in a scanning electron microscope. The generated secondary electrons (or ions) are collected to form an image of the surface of the sample.

The ion beam allows the milling of small holes in the sample at well localized sites, so that cross-sectional images of the structure can be obtained or that modifications in the structures can be made.


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